铜化学机械抛光中复合缓蚀剂的作用机制

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Mixed corrosion inhibitors （ benzotriazole （BTAH） and sodium dodecyl sulfate （ SDS ） ） were utilized in copper chemical mechanical polishing（CMP） slurry. The influences of BTAH and SDS, complexing agent, and surfactant on the CMP of copper were studied, and the mechanisms of BTAH and SDS on copper surface were discussed. The results show that compact Cu-BTAH and Cu-SDS protective films are formed on the copper surface, and thus, which are excellent copper corrosion inhibitors. When using BTAH and SDS as mixed corrosion inhibitors, ammonium phosphate （AHP）as complexing agent, and hydroxy ethyl cellulose（HEC） as surfactant, a low surface roughness of 0. 2 nm is got by this CMP slurry. The appearance of HEC in the slurry is found to be very effective in reducing the nano-sized particle deposition on copper surface.将复合缓蚀剂（苯并三氮唑（BTAH）和十二烷基磺酸钠（SDS））应用到铜的化学机械抛光液中，考察BTAH和SDS对铜表面化学机械抛光的影响，并探讨BTAH和SDS在铜表面的作用机制；分析BTAH和SDS抛光液中络合剂和表面活性剂对铜化学机械抛光性能的影响。结果表明：BTAH和SDS在铜表面形成了致密的Cu．BTAH和Cu．SDS保护膜，是优良的铜缓蚀剂。当以磷酸氢二胺（AHP）为络合剂，羟乙基纤维素（HEC）为表面活性剂时，优化后的BTAH和SDS抛光液取得了低至RaO．2nm的表面粗糙度，同时发现HEC有降低纳米颗粒残留的作用。