Cu2-xS纳米管的制备及其表面光电性质

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In order to explore the photoelectric applications of CuS materials,copper sulfide（Cu2-xS） nanotubes were prepared via hydrothermal method.The structure and morphology of the Cu2-xS were characterized with X-ray diffraction（XRD） and scanning electron microscopy（SEM）.The surface optoelectronic properties of the products and their photovoltaic properties in varying electric field were investigated by UV-vis spectrophotometer,surface photovoltage spectrum（SPS）,and field-induced surface photovoltage spectroscopy（FISPS）.The results show that the outer diameter,thickness,and length of the nanotubes are 325-675 nm,70-125 nm,and 10-20 μm,respectively.There are two absorption areas in the wavelength range of 300-800 nm according to the UV-vis spectrum.The FISPS shows that the copper sulfide（Cu2-xS） nanotubes are n-type semiconductor.为了研究CuS纳米材料在光电领域中的应用,采用水热法合成Cu2-xS纳米管,用X射线衍射仪、扫描电镜表征产物的结构和形貌.在25℃下测试了Cu2-xS纳米管的光吸收性能,利用紫外可见吸收光谱、表面光电压谱和场诱导表面光电压谱,研究其表面光电性质及光伏响应随电场变化的规律.结果表明：合成的Cu2-xS纳米管外径为325-675nm,管壁厚为70-125nm,长度为10-20μm;在300-800nm紫外可见光谱范围内,存在两个吸收区域,场诱导表面光电压谱表明所制备的样品为n-型半导体.